NDLI: Review of silicon-germanium BICMOS technology after 4 years of production and future directions

Content Provider	IEEE Xplore Digital Library
Author	Subbana, S. Freeman, G. Ahlgren, D. Jagannathan, B. Greenberg, D. Johnson, J. Bacon, P. Najarian, R. Herman, D. Meyeron, B.
Copyright Year	2000
Description	Author affiliation: Commun. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA (Subbana, S.)
Abstract	Silicon Germanium (SiGe) HBTs have proven themselves as cheaper, viable replacements for GaAs in many different applications. SiGe RFIC products have been available for the last couple of years. SiGe SONET parts have also become available and demonstrate good performance. Adding to this product success, it has been possible to replace several GaAs chips with one silicon-germanium chip for yield, reliability, power, and cost improvements. Integration with low-power, digital CMOS has also been demonstrated in different applications. Digital CMOS application-specific integrated circuits (ASICs) have been combined with SiGe HBT circuits. Various SiGe BICMOS ICs are in volume production in our CMOS fab. The quality of passive components such as inductors and capacitors is also approaching that of GaAs, enabling high-performance RF and networking circuits.
Starting Page	7
Ending Page	10
File Size	356564
Page Count	4
File Format	PDF
ISBN	0780359682
ISSN	10647775
DOI	10.1109/GAAS.2000.906262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit yield Costs Germanium silicon alloys Gallium arsenide SONET BiCMOS integrated circuits Radiofrequency integrated circuits CMOS digital integrated circuits Integrated circuit reliability Silicon germanium
Content Type	Text
Resource Type	Article

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