NDLI: Finger number and width variation effect of nano-scale strained NMOS device with and without protection diode

Content Provider	IEEE Xplore Digital Library
Author	Sung-Man Cho Gwang-Doo Jo Young-Kwang Kim Il-Hun Son Hyuck-In Kwon Jong-Ho Lee
Copyright Year	2008
Description	Author affiliation: SYS. LSI, Samsung Electron. Co. Ltd., Yongin, South Korea (Gwang-Doo Jo; Young-Kwang Kim; Il-Hun Son) \|\| Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea (Sung-Man Cho; Jong-Ho Lee)
Abstract	The enhancement of carrier mobility by strain is necessary to improve transistor performance with scaling down. Especially the technique of inducing strain by using a tensile or compressive nitride capping layer is more attractive because of its relative process simplicity and its extendibility from bulk-Si to silicon-on-insulator (SOI) MOSFETS. Also to improve the packing density of integrated circuits, scaling down of isolation region is necessary. Shallow Trench Isolation (STI) is usually used in order to avoid the subthreshold hump, bird's beak and field oxide thinning effect in LOCOS. Compared with LOCOS isolation, STI has various additional advantages such as perfect surface planarity, scalability and latchup immunity, However the reliability of strained NMOS device with narrow width and gate finger number variation at 60nm gate length has not been investigated yet in detail and also protection diode effect. In this work, we have shown various STI stress and protection diode effects in narrow width device, finger number variation of the gate with 60nm gate length technology by HCE (Hot Carrier Effect), 1/f noise.
Starting Page	1
Ending Page	2
File Size	1513437
Page Count	2
File Format	PDF
ISBN	9781424420711
DOI	10.1109/SNW.2008.5418488
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Tensile strain Scalability Fingers Nanoscale devices Capacitive sensors Protection Diodes MOSFETs MOS devices
Content Type	Text
Resource Type	Article

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