NDLI: 3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor

Content Provider	IEEE Xplore Digital Library
Author	Seoane, N. Martinez, A. Brown, A.R. Barker, J.R. Asenov, A.
Copyright Year	2008
Description	Author affiliation: Dept. Electron.&Electr. Eng., Univ. of Glasgow, Glasgow, UK (Martinez, A.; Brown, A.R.; Barker, J.R.; Asenov, A.) \|\| Dept. Electron. & Comput. Sci., Univ. Santiago de Compostela, Santiago de Compostela, Spain (Seoane, N.)
Abstract	In this paper we study the fluctuations in the I-V characteristics due to coherent scattering off different configurations of discrete dopants in the source/drain of an extremely thin Si nanowire transistor. The self-consistent screening potential at the impurities is calculated using a full 3D NEGF formalism coupled to the 3D solution of the Poisson equation [3]. The fluctuations in the I-V characteristics can be understood by examining the energy dependence of the transmission coefficients. We show that the effective potential presented to electrons by a positively charged ionised donor does not necessarily have the simple form of an attractive screened Coulomb potential. Instead, the self-consistent electrostatics leads to an effective potential that resembles an inverted sombrero: the core is Coulomb like, but the radial dependence rises through a maximum before flattening to an asymptotically zero value. This maximum introduces quasi-bound (resonant tunnelling) states. For the first time, we demonstrate the effects of the sombrero potential on scattering and ultimately device current transmission. The whole screening occurs due to electrons congregating in the quasi-bound states of the sombrero potential
Starting Page	1
Ending Page	2
File Size	1568074
Page Count	2
File Format	PDF
ISBN	9781424420711
DOI	10.1109/SNW.2008.5418462
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Heart Current measurement Quantum dots Germanium silicon alloys Scattering Modems Isotopes Physics Silicon germanium Electrons
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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