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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Eriksson, M.A. |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Phys., Univ. of Wisconsin-Madison, Madison, WI, USA (Eriksson, M.A.) |
| Abstract | It is intriguing that silicon, the material at the heart of modem classical electronics, also has properties that are well suited to quantum electronics. These properties include weak spin-orbit coupling and the existence of zero-nuclear spin isotopes. This synergy between quantum and classical properties offers the possibility that silicon quantum dots potentially could be used as quantum bits, if high-quality, extremely stable devices can be fabricated and measured. In this talk, we will present data demonstrating silicon/silicon-germanium quantum dots containing individual electrons. Single-electron occupation is confirmed through the use of integrated charge sensing. We will also present measurements of Si/SiGe double quantum dots, in which we have recently observed Pauli spin blockade a¿¿¿ the suppression of transport current through a double quantum dot due to long lived spin states. Reversing the flow of current leads to a new effect in which long spin lifetimes enhance, rather than suppress, the flow of current through the double dot. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 106992 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424420711 |
| DOI | 10.1109/SNW.2008.5418452 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-06-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Heart Current measurement Germanium silicon alloys Quantum dots Modems Isotopes Physics Silicon germanium Electrons |
| Content Type | Text |
| Resource Type | Article |
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