NDLI: Three-dimensional quantum simulation of silicon nanowires

Content Provider	IEEE Xplore Digital Library
Author	Schenk, A. Luisier, M.
Copyright Year	2008
Description	Author affiliation: Integrated Syst. Lab., ETH Zurich, Zurich, Switzerland (Schenk, A.) \|\| Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA (Luisier, M.)
Abstract	Silicon nanowires are perspective core components of future integrated circuits. The feasibility of Si nanowire FETs has been demonstrated by several groups, e.g. by Cui et al. TCAD-oriented simulation tools can accompany the sophisticated fabrication process, providing aid for performance improvement, supporting the basic understanding, and facilitating the development of new structures. Nanowire FETs with small cross sections and ultra-short gates call for a three-dimensional (3D) quantum mechanical treatment of carrier transport beyond the effective mass approximation (EMA). As long as inelastic scattering is neglected, a wave function approach is the method of choice due to its numerical advantage over the non-equilibrium Green's function (NEGF) technique. However, the computational burden does not allow to treat important effects like phonon scattering and gate tunneling on a full-band (FB) level. These phenomena still require the EMA. In this paper, we describe a FB quantum transport simulator and show FB and EMA simulation results for quantum-ballistic currents in Si nanowire FETs. We focus on the effects of channel orientation, surface roughness, and direct gate tunneling leakage.
Starting Page	1
Ending Page	2
File Size	1060383
Page Count	2
File Format	PDF
ISBN	9781424420711
DOI	10.1109/SNW.2008.5418465
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Circuit simulation Computational modeling Quantum mechanics Particle scattering Tunneling Silicon Nanowires Effective mass FETs
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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