NDLI: Electrical Analysis and Packaging Solutions for High-Current Fast-Switching SiC Components

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Electrical Analysis and Packaging Solutions for High-Current Fast-Switching SiC Components

Content Provider	IEEE Xplore Digital Library
Author	Mermet-Guyennet, M. Castellazzi, A. Fabre, J. Ladoux, P.
Copyright Year	2012
Abstract	Silicon Carbide (SiC) technology will push the limits of existing silicon components in the three directions: higher blocking voltage, higher operating temperature and higher switching speed. The last feature, in particular, allows multiplying by a factor 20 the switching frequency, as compared to equivalent silicon IGBT components, but with the constraint of a large increase in di/dt and dv/dt. At turn-off, dv/dt is easily controlled by the driver, but di/dt is mainly intrinsic to the transistor and diode technology. In addition, paralleling elementary SiC devices will increase drastically the di/dt and, for a nominal current value of 1000 A, the di/dt will be in the range of 20 to 50 kA/mus. The switching behaviour of SiC devices (MOSFET and JFET) must be well understood at turn-off and turn-on, including the influence of the free-wheeling SiC diode internal capacitance which is much higher than the equivalent for Si devices. Then, the behaviour of these elementary devices in their environment with parasitic R,L,C is presented with induced oscillations and over-voltages. This analysis will produce design guide-lines for SiC device packaging and global inverter design.
Starting Page	1
Ending Page	6
File Size	1282730
Page Count	6
File Format	PDF
ISBN	9783800734146
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-06
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	VDE VERLAG GmbH
Subject Keyword	Inductance Silicon carbide Computational modeling Capacitors Switches MOSFET circuits Silicon
Content Type	Text
Resource Type	Article

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