NDLI: Stacked substrates for high voltage applications

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2012 7th International Conference on Integrated Power Electronics Systems (CIPS)

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Stacked substrates for high voltage applications

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2010 6th International Conference on Integrated Power Electronics Systems

Stacked substrates for high voltage applications

Content Provider	IEEE Xplore Digital Library
Author	Hohlfeld, O. Bayerer, R. Hunger, T. Hartung, H.
Copyright Year	2012
Abstract	A new way of insulation high voltages in modules is described, solving the problem of high electric fields at sharp corners with multilayer structures. Today, modules with a blocking voltage above 1700V are based on Si3N4 or AlN substrates. Special effort is required to manage the high electric fields that occur at the sharp edges of the metal layers on both sides of the ceramic layer. Simulations show that stacking substrates can significantly reduce the peak electric fields that are generated. This allows cheaper isolation solutions such as partial discharge Al2O3 ceramics can be used to replace the more expensive AlN or Si3N4 ceramic. The Influence of ceramic and metallization thickness as well as the layout design have been discussed. The simulations have been confirmed by measurements. Finally limitations of the stacked structures are highlighted and suggestions are made for practical use in modules.
Starting Page	1
Ending Page	4
File Size	353177
Page Count	4
File Format	PDF
ISBN	9783800734146
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-06
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	VDE VERLAG GmbH
Subject Keyword	Partial discharges Metallization Ceramics Electric fields Substrates
Content Type	Text
Resource Type	Article

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