NDLI: Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films

Content Provider	IEEE Xplore Digital Library
Author	Zonja, S. Ivanda, M. Ocko, M. Suligoj, T. Koricic, M. Biljanovic, P.
Copyright Year	2011
Description	Author affiliation: Ruđer Bošković Institute, Bijenička cesta 54, Zagreb, Craotia (Ivanda, M.) \|\| Institute of Physics, Bijenička cesta 46, Zagreb, Croatia (Ocko, M.) \|\| Department of Electronics, Microelectronics and Intelligent Systems, Faculty of Electrical Engineering and Computing, University of Zagreb, Unska 3, Zagreb, Croatia (Zonja, S.; Suligoj, T.; Koricic, M.; Biljanovic, P.)
Abstract	In the last few years, silicon has drawn increased attention due to the possible application as thermoelectric material. In this paper we are presenting the results of the investigation on several heavily phosphorus doped polycrystalline silicon thin films. The samples were prepared in LPCVD reactor and then subjected to rapid thermal annealing in different time intervals (20, 30 and 45 seconds). They are characterized using different techniques. Four point probe resistivity measurements, scanning electron microscopy and Raman spectroscopy are used to give a valuable insight into the structural characteristics such as the grain size, degree of crystallinity and the free carrier concentration. On the basis of the room temperature resistivity, concentration of free carriers was determined to be around $1·10^{20}$ $cm^{−3}$ for all the samples. A special stress was set to the low temperature measurements which include resistivity measurements down to 4.2 K together with Seebeck coefficient data down to 80 K. These measurements enabled us to reveal some essential features of the electronic structure of the investigated systems. For all the samples, electrical resistivity shows the $T^{3/2}$ dependence in the wide temperature range (for some samples even from 50 to 300 K). The resistivities of the samples show that the samples are in metallic regime from the lowest measured temperatures. The thermopower behavior suggests that we can treat the transport properties within the free electron model. A comprehensive study was made to combine suitable theories appropriate in the analysis of results.
Starting Page	33
Ending Page	38
File Size	837068
Page Count	6
File Format	PDF
ISBN	9781457709968
e-ISBN	9789532330595
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-23
Publisher Place	Croatia
Access Restriction	Subscribed
Rights Holder	MIPRO
Subject Keyword	Temperature measurement Temperature dependence Conductivity Silicon Mathematical model Equations
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials

Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

Characterization of Thermoelectric Properties of Heavily Doped n-Type Polycrystalline Silicon Carbide Thin Films

Electrical properties of heavily doped polycrystalline silicon-germanium films

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

Structural properties of heavily b-doped sige thin films (2009).

Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films

Electronic and structural properties of amorphous N-doped silicone carbide

Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films

Similar Documents

On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials

Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

Characterization of Thermoelectric Properties of Heavily Doped n-Type Polycrystalline Silicon Carbide Thin Films

Electrical properties of heavily doped polycrystalline silicon-germanium films

Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

Structural properties of heavily b-doped sige thin films (2009).

Thermal oxidation effect on structural and optical properties of heavily doped phosphorus polycrystalline silicon films

Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films

Electronic and structural properties of amorphous N-doped silicone carbide

Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films