NDLI: Performance improvement of SiGe-HBT terahertz detectors using exponential base grading

Content Provider	IEEE Xplore Digital Library
Author	Ghodsi, H. Kaatuzian, H.
Copyright Year	2015
Description	Author affiliation: Electr. Eng. Dept., AmirKabir Univ. of Technol. (AUT), Tehran, Iran (Ghodsi, H.; Kaatuzian, H.)
Abstract	Nowadays Terahertz Electronics and optoelectronic devices and systems play important roles in many researches in various fields of science, technology and medicine. In this paper a new modified version of a SiGe-HBT which is used in a pre-implemented direct conversion terahertz detector has been proposed for improving technical characteristics of detector device. Benefits of our new proposed device is because of introducing an exponential Germanium grading profile in base region of SiGe-HBT in order to improve base transit time which can effectively boost high frequency performance of transistor. For confirmation of our analysis we use Continuity and Poisson's equations to obtain better performance for our new proposed transistor. TCAD SILVACO software have been used for simulations. Our results and previously reported empirical results are compared. Comparison takes place for both of prefabricated and our new proposed device. Based on simulation analysis, responsivity of our detector is improved about 17% from 1 A/W to 1.17 A/W and its bandwidth is also improved about 80 GHz. Power consumption and noise performance of the new device are also considerably improved in comparison with the initial detector design.
Starting Page	1139
Ending Page	1143
File Size	1396916
Page Count	5
File Format	PDF
e-ISBN	9781479919727
DOI	10.1109/IranianCEE.2015.7146384
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-10
Publisher Place	Iran
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Decision support systems Electrical engineering Direct conversion detector Conferences Responsivity Hafnium Electron mobility Electric fields SiGe-HBT Erbium Exponential base grading Noise equivalent power
Content Type	Text
Resource Type	Article

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