NDLI: Noise sources of p-type CdTe single crystal

Content Provider	IEEE Xplore Digital Library
Author	Andreev, A. Raska, M. Sikula, J. Grmela, L.
Copyright Year	2008
Description	Author affiliation: Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic (Andreev, A.; Raska, M.; Sikula, J.; Grmela, L.)
Abstract	We have carried out noise measurements of CdTe single crystals, prepared by Institute of Physics, Charles University in Prague. These crystals are used as radiation detectors. Three types of significant noise were observed: low frequency noise, generation-recombination noise and thermal noise. The sample had very high value of 1/f noise, much higher than theoretical estimation. The depleted layers nearby the contacts are the dominating sources of noise. The contact whereof the hole concentration reduces with an applied electric field exerts prevailing effect on the noise. The resulting noise voltage is much higher than it must have been with the calculated quantity of charge carriers in the sample as a result of the depleted layers effect on the noise. Consequently the significant noise voltage appeared in the area nearby the contacts sums with the much lower value of the noise voltage in the homogenous area of the sample.
Starting Page	25
Ending Page	27
File Size	205544
Page Count	3
File Format	PDF
ISBN	9781424439720
DOI	10.1109/ISSE.2008.5276487
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-07
Publisher Place	Hungary
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise Noise generators Voltage Crystals Noise measurement Physics Radiation detectors Estimation theory Noise reduction Charge carriers
Content Type	Text
Resource Type	Article

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