NDLI: Relaxation time in CdTe single crystals

Content Provider	IEEE Xplore Digital Library
Author	Andreev, A. Holcman, V. Grmela, L. Sikula, J.
Copyright Year	2008
Description	Author affiliation: Dept. of Phys., Brno Univ. of Technol., Brno, Czech Republic (Andreev, A.; Holcman, V.; Grmela, L.; Sikula, J.)
Abstract	Bulk resistance decay of two cadmium telluride single crystals was investigated. Each CdTe crystal has four golden contacts, two current contacts and two voltage contacts. That allows us to distinguish between bulk resistance and contact area. The bulk resistance of each CdTe single crystal was measured during long time interval with an applied voltage U = 16 V. Detectors were placed into a cryostat. That allowed to hold the temperature constant during the measurements and eliminate the illumination influence. The temperature of the samples was 300 K at first and after some period of time (approximately 1 day) it was sharply raised to 390 K. We observed the resistance slow decreasing with time with temperature T = 300 K and T = 390 K. All the samples have very high value of relaxation time. The presented samples must have not one but four acceptor or donor levels, some of them are deep levels. We have discovered that the interactions between the valence band and deep acceptor levels or between the conductivity band and deep donor levels cause this long value of relaxation time.
Starting Page	28
Ending Page	31
File Size	3298241
Page Count	4
File Format	PDF
ISBN	9781424439720
DOI	10.1109/ISSE.2008.5276484
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-07
Publisher Place	Hungary
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Crystals Voltage Electrical resistance measurement Cadmium compounds Contact resistance Time measurement Detectors Lighting Conductivity
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Bulk resistance decay in CdTe

Research on the Growth Condition of CdTe Single Crystal for γ-Ray Detector

High-resolution CdTe radiation detectors with single-polarity charge sensing technique

Transport characteristics of CdTe radiation detectors

Characterization of CdTe crystals grown by the Vertical Bridgman method

Notice of RetractionComparison of relaxation properties of n-type and p-type CdTe single crystals

Analysis of the CdTe Hole Concentration and the Hole Mobility

Investigation of Electrical Conductivity of KH2PO4 Single Crystals

Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals

Relaxation time in CdTe single crystals

Similar Documents

Bulk resistance decay in CdTe

Research on the Growth Condition of CdTe Single Crystal for γ-Ray Detector

High-resolution CdTe radiation detectors with single-polarity charge sensing technique

Transport characteristics of CdTe radiation detectors

Characterization of CdTe crystals grown by the Vertical Bridgman method

Notice of RetractionComparison of relaxation properties of n-type and p-type CdTe single crystals

Analysis of the CdTe Hole Concentration and the Hole Mobility

Investigation of Electrical Conductivity of KH2PO4 Single Crystals

Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals

Relaxation time in CdTe single crystals