NDLI: Design and modeling of a novel 4H-SiC normally-off BMFET transistor for power applications

Content Provider	IEEE Xplore Digital Library
Author	Pezzimenti, F. Della Corte, F.
Copyright Year	2010
Description	Author affiliation: DIMET Mediterranea University of Reggio Calabria, Via Graziella Feo di Vito 89100, Italy (Pezzimenti, F.; Della Corte, F.)
Abstract	First numerical simulation results targeted to the design of a novel 4H-SiC normally-off Bipolar Mode Field Effect Transistor (BMFET) are presented. Starting from a commonly available 4H-SiC epitaxial wafer, with an epitaxial layer with a thickness of a few tens of microns, and considering a completely planar device structure where the highly doped source and gate regions are defined by means of implant technology, the developed analysis predicts the feasibility of a transistor well suitable for high power applications, with a very high current gain, a forward current density up to 1 $kA/cm^{2},$ an on-state output resistance in the order of few $mΩ×cm^{2}$ and a blocking voltage in the range of 1–2 kV. The 4H-SiC fundamental physical models, such as the doping incomplete ionization and the carrier recombination processes, were carefully taken into account during the simulations. Modeling the device output characteristics in the various operation conditions (off-state, active region, saturation), the role of different design parameters was investigated.
Starting Page	1129
Ending Page	1134
File Size	312018
Page Count	6
File Format	PDF
ISBN	9781424457939
e-ISBN	9781424457953
DOI	10.1109/MELCON.2010.5476362
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-04-26
Publisher Place	Malta
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor process modeling Semiconductor device modeling Numerical simulation FETs Epitaxial layers Implants Current density Voltage Doping Ionization
Content Type	Text
Resource Type	Article

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