NDLI: Laser created silicon vias for stacking dies in MCMs

Content Provider	IEEE Xplore Digital Library
Author	Lee, R.A. Whittaker, D.R.
Copyright Year	1991
Description	Author affiliation: Coll. of Eng., Univ. of South Florida, Tampa, FL, USA (Lee, R.A.; Whittaker, D.R.)
Abstract	The stacking of silicon devices is gaining some interest as it will allow even greater densities over current multichip module (MCM) approaches. One type of approach being tried in the industry is interconnecting stacked dies by routing their metal lines to the edge of the die and then strapping the appropriate lines from each die together. An approach being pursued by the Center for Microelectronics Research (CMR) at the University of South Florida is the creation of silicon interconnect vias for communication through the active chip or wafer. Vias of 1 to 2 mil diameters have been successfully created by laser ablation of silicon. Studies are currently in progress to determine the effect such via creation has on nearby active devices. A test vehicle containing transistors and capacitors of various geometries is being employed for the purpose of measuring any detriment that the laser drilling has when vias are created. Data are presented on whether any changes have been measured in various parameters, such as subthreshold voltages and current leakage. Scanning electron micrographs are shown, and progress to date on the methodology employed for metallizing the side walls of the vias is discussed.<>
Starting Page	262
Ending Page	265
File Size	341179
Page Count	4
File Format	PDF
ISBN	0780301552
DOI	10.1109/IEMT.1991.279791
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-09-16
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stacking Laser ablation Silicon devices Multichip modules Metals industry Routing Microelectronics Testing Vehicles Capacitors
Content Type	Text
Resource Type	Article

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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