NDLI: Recent developments in HgCdTe photovoltaic devices grown on alternative substrates using heteroepitaxy

Content Provider	IEEE Xplore Digital Library
Author	Tennant, W.E.
Copyright Year	1983
Description	Author affiliation: Rockwell International Science Center, Thousand Oaks, CA (Tennant, W.E.)
Abstract	One of the principal difficulties in liquid phase epitaxial (LPE) HgCdTe MCT photodiode production is the availability of high quality substrates for epitaxial growth. Rockwell has developed an alternative substrate material which overcomes the disadvantages of bulk CdTe without sacrificing the epitaxial quality of HgCdTe grown on it. This substrate consists of a single crystal sapphire wafer (typically 2" in diameter) prepared appropriately and covered with a thin (10 - 20 µm) LPE grown layer of cadmium telluride. The substrate has been given the acronym PACE for Producible Alternative to CdTe for Epitaxy. Devices made in HgCdTe LPE wafers on PACE have shown excellent electrical and optical properties and superior uniformity when compared to devices fabricated in HgCdTe grown on CdTe substrates. TypicalR_{o}Avalues for midwave infrared (MWIR, 3- 5 µm wavelength) diodes are > 10 $Ω-cm^{2}at$ 195K (cutoff wavelength,\lambda_{c} = 4.2µm), >3 \times $10^\{4\}Ω-cm^{2}at$ 120K (\lambda_{c} = 4.45µm) and > $10^{6}Ω-cm^{2}at$ 77K (λc= 4.6 µm). Typical quantum efficiencies are 60 - 80% without AR coating. Analysis of the detectivity of a 1024 element MWIR hybrid focal plane array shows that the number of defective elements, even under low-to-moderate photon backgrounds (high $10^{12}photons$ $cm^{2}s^{-1}),$ is less than 5%. This new technology appears very promising for lowering cost and increasing yield of infrared photodetector arrays. It may also lead to new device applications in areas traditionally reserved for more conventional materials such as GaAs and Si.
Starting Page	704
Ending Page	706
File Size	345187
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1983.190605
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic systems Solar power generation Substrates Epitaxial growth Photodiodes Production Availability Crystalline materials Cadmium compounds Optical devices
Content Type	Text
Resource Type	Article

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