NDLI: Ion-implanted strained-layer superlattice device

Content Provider	IEEE Xplore Digital Library
Author	Myers, D.R. Zipperian, T.E. Biefeld, R.M. Wiczer, J.J.
Copyright Year	1983
Description	Author affiliation: Sandia National Laboratories, Albuquerque, NM (Myers, D.R.)
Abstract	High-quality p-n junction diodes are demonstrated in $Be^{+}-implanted$ GaAsxP1-x/GaP strained-layer superlattices (SLSs). This is the first demonstration of electrical activation of an implanted species with useful electrical characteristics in an SLS. X-ray diffraction indicates that the superlattice structure survived the implantation and annealing, and room temperature electrical measurements indicate diode ideality factors of ∼ 2.0 over seven decades of forward current for these devices. Diodes formed in SLSs with n-type background doping of $10^{17}cm^{-3}exhibit$ room temperature reverse leakage currents $of1.5\times10^\{-7\}A/cm^{2}at$ -10V. The abrupt avalanche breakdown (at 100 µA) of these unpassivated devices occurs at -18V. The diodes show an uncoated peak external quantum efficiency of 30% for photons with energies slightly above the superlattice bandgap of 2.1eV.
Starting Page	700
Ending Page	703
File Size	332090
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1983.190604
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Superlattices Diodes Temperature measurement Photonic band gap P-n junctions Gallium arsenide Electric variables Laser sintering X-ray diffraction Annealing
Content Type	Text
Resource Type	Article

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