NDLI: 25 amp, 500 volt insulated gate transistors

Content Provider	IEEE Xplore Digital Library
Author	Chang, M.F. Pifer, G.C. Baliga, B.J. Adler, M.S. Gray, P.V.
Copyright Year	1983
Description	Author affiliation: General Electric Company, Syracuse, N. Y. (Chang, M.F.)
Abstract	The concept of merging MOS gating with bi-polar current conduction to create a new family of power semiconductor devices with superior electrical characteristics was reported at last year's conference (1). This paper will report the development of an improved device structure which enables increasing the operating current density even further so that the insulated gate transistors (IGT's) can be operated at current densities of over 200 Amperes per $cm^{2},$ i.e., at over 20 times that of the power MOSFET. As discussed in Reference (1), the maximum operating current density is limited by the latch-up of a parasitic thyristor inherent in the device structure. Using two dimensional computer modelling, it has been shown that this latch-up can be suppressed by reducing the lateral sheet resistance of the p-base. This has been experimentally achieved by the addition of a high concentration boron diffusion in the DMOS cells. The electrical characteristics of 25 Amp, 500 Volt IGT devices designed and fabricated using the modelling results will be presented. These devices have the highest power handling capability (12.5 kVA) achieved in power MOS devices to date.
Starting Page	83
Ending Page	86
File Size	360879
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1983.190446
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1983-12-05
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulation Current density Electric variables Merging Power semiconductor devices MOSFET circuits Power MOSFET Thyristors Electric resistance Boron
Content Type	Text
Resource Type	Article

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