NDLI: Double diffused high speed Ge transistors

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Double diffused high speed Ge transistors

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1966 International Electron Devices Meeting

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Double diffused high speed Ge transistors

Content Provider	IEEE Xplore Digital Library
Author	Gansauge, P.
Copyright Year	1967
Description	Author affiliation: IBM Research Center, Yorktown Heights, N. Y. (Gansauge, P.)
Abstract	The recent progress on pyrolytic deposition of masking films on semiconductor surfaces allows one to adopt double diffused technologies for Ge similar to that used for Si. Because of the more favorable material properties, Ge offers the possibility of higher speed and frequency devices. This paper describes the process of double diffused npn and npn planar transistors. The lateral dimensions of the three stripe transistors are such that conventional photoresist processes can be applied. The emitter stripe width is 5\micro, emitter and base are separated by 5\micro. Impurity profiles are discussed for both types of transistors. To obtain high speed transistors, the diffused structures are rather shallow. The emitter depth and base width are 2/\micro.
Starting Page	154
Ending Page	156
File Size	175557
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1967.187917
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1967-10-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Circuits Thermal resistance Protection Conductive films Conducting materials Frequency Delay Switches Electric breakdown Etching
Content Type	Text
Resource Type	Article

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