NDLI: A quantitative theory of 1/f type noise due to interface states in thermally oxidized silicon

Content Provider	IEEE Xplore Digital Library
Author	Nicollian, E.H. Melchior, H.
Copyright Year	1967
Description	Author affiliation: Bell Telephone Laboratories, Murray Hill, N. J. (Nicollian, E.H.)
Abstract	A quantitative theory of 1/f type noise is derived from the distribution of trapping times for charges in interface states. The distribution of trapping times has been recently explained quantitatively by means of a random distribution of surface potential caused by a random distribution over the plane of the interface of fixed charges located in the oxide. This model, which agrees with the interface state time constant dispersion measured by the MIS conductance technique, leads to a noise spectrum which is independent of frequency at very low frequencies, tends towards a $1/f^{2}dependence$ at high frequencies, and has an extended 1/f frequency dependence at intermediate frequencies. The mechanism for time constant dispersion is independent of temperature and silicon resistivity; it depends only on the majority carrier density at the silicon surface, the interface state density, and the density of fixed oxide charges. The dependence of open circuit mean square noise voltage on these parameters and frequency are illustrated for an MOS capacitor.
Starting Page	104
Ending Page	104
File Size	99882
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1967.187862
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1967-10-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Interface states Silicon Dispersion Frequency measurement Noise measurement Time measurement Low-frequency noise Frequency dependence Temperature dependence Conductivity
Content Type	Text
Resource Type	Article

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