NDLI: Protection of SiO2from sodium contamination with phosphosilicate glass

Content Provider	IEEE Xplore Digital Library
Author	Chetney, G.T. Holschwandner, L.H.
Copyright Year	1965
Description	Author affiliation: Bell Telephone Laboratories, Allentown, Pa. (Chetney, G.T.)
Abstract	Low and stable surface state densities can be achieved on silicon devices with thermally-grown SiO2. Such systems are however extremely sensitive to contaminants, such as sodium. The addition of a phosphosilicate glass layer to the top of thermally-grown SiO2provides comparable initial oxide properties and also excellent protection against sodium contamination. For this work MOS diodes were fabricated with phosphorus-glassed SiO2. Some were purposely contaminated with a dilute solution of NaOH before contact deposition (\sim 10^{15}Na $ions/cm^{2}).$ Others were processed routinely. Neither of these groups of MOS diodes showed the typical increase of surface states during thermal compression wire bonding. Approximately1 \times 10^{11}further $states/cm^{2}were$ introduced during temperature-field aging for uncontaminated diodes; contaminated diodes showed slightly more. As a control, ordinary thermally-grown SiO2was contaminated with the same NaOH solution. Na contaminated thermally-grown SiO2showed approximately5 \times $10^\{12\}states/cm^{2}introduced$ during wire bonding and a further $10^{13}states/cm^{2}during$ temperature-field aging.
Starting Page	61
Ending Page	62
File Size	176144
Page Count	2
File Format	PDF
DOI	10.1109/IEDM.1965.187626
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1965-10-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Protection Diodes Snow Silicon Neutrons Voltage Glass Surface contamination Aging Wire
Content Type	Text
Resource Type	Article

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