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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Agusta, B. Bardell, P. Castrucci, P. |
| Copyright Year | 1965 |
| Description | Author affiliation: IBM, Hopewell Junction, N. Y. (Agusta, B.) |
| Abstract | A 70 × 70 mil monolithic silicon memory chip has been successfully fabricated which is used as a unit building block to structure a three dimensional high speed scratch pad memory. The chip contains 16 memory cells with each cell consisting of 5 transistors and 4 resistors. The memory array can be non-destructively read with an 8 nanosecond pulse width and requires a 20 nanosecond write pulse width. The "one" signal level is 60 millivolts into a 20 ohm sense load with essentially an infinite signal to noise ratio. The integrated silicon devices have npn planar diffused structures with junction isolation. The circuits have single level fixed pattern interconnections on thermally grown oxide with one underpass resistor per cell to provide the crossing of signal lines. |
| Starting Page | 39 |
| Ending Page | 39 |
| File Size | 91509 |
| Page Count | 1 |
| File Format | |
| DOI | 10.1109/IEDM.1965.187575 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1965-10-20 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Signal to noise ratio Plasma temperature Space vector pulse width modulation Resistors Germanium Wavelength measurement Silicon devices Circuits Thermal resistance Telephony |
| Content Type | Text |
| Resource Type | Article |
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