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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nitta, S. Purushothaman, S. Smith, S. Krishnan, M. Canaperi, D. Dalton, T. Volksen, W. Miller, R.D. Herbst, B. Hu, C.K. Liniger, E. Lloyd, J. Lane, M. Rath, D.L. Colburn, M. Gignac, L. |
| Copyright Year | 2002 |
| Description | Author affiliation: IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA (Nitta, S.; Purushothaman, S.; Smith, S.; Krishnan, M.; Canaperi, D.; Dalton, T.) |
| Abstract | In this communication, a novel scheme known as the etch back/gapfill (EBGF) integration scheme was introduced and shown to overcome most of the well known challenges (2) that are expected to complicate the integration of porous low k materials. It was shown that this integration scheme can be used to successfully generate multi-level dual damascene structures using intermetal dielectric (IMD) materials with k less than 2.0 with promising yield and reliability. It has been demonstrated that EBGF integration is a promising method to integrate fragile porous low k materials into BEOL structures by avoiding most of the major processing issues associated with such materials. By using this scheme, new ultra-low k and extreme low k materials can be introduced with limited modification to the existing dense IMD fabrication infrastructure while increasing the performance of the interconnects substantially. As such the method offers a potential to break through what is now commonly referred to as the "red brick wall" in the BEOL part of the ITRS roadmap. |
| Starting Page | 321 |
| Ending Page | 324 |
| File Size | 272052 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780386841 |
| DOI | 10.1109/IEDM.2004.1419145 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-12-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Damascene integration Dielectric materials Etching Inorganic materials Dielectrics and electrical insulation Materials reliability Computer hacking Wires Delay Semiconductor materials |
| Content Type | Text |
| Resource Type | Article |
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