NDLI: Transient substrate current effects on n-channel MOSFET device lifetime

Content Provider	IEEE Xplore Digital Library
Author	Wang, H. Davis, M. Lahri, R.
Copyright Year	1988
Description	Author affiliation: Nat. Semicond., Puyallup, WA, USA (Wang, H.; Davis, M.; Lahri, R.)
Abstract	The n-channel MOSFET transient substrate current during dynamic hot-carrier stressing has been found to be a strong function of the rise and fall time of the gate/drain voltages. At fast rise and fall times (<10 ns), the displacement current associated with the dynamic stressing becomes a significant portion of the transient substrate current. The magnitude and direction of displacement current significantly affects the extent of the device degradation. The nature of the transient substrate current and its effect on MOSFET device lifetime is demonstrated here. Device degradation is found to depend on the circuit environment in terms of bias conditions. Therefore, performance degradation due to hot carriers is also dependent on the application of the MOSFET in the circuit. A BiCMOS 15-ns 256 K SRAM (static random access memory) is used to demonstrate this methodology.<>
Starting Page	216
Ending Page	219
File Size	225720
Page Count	4
File Format	PDF
ISSN	01631918
DOI	10.1109/IEDM.1988.32794
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-12-11
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Substrates Degradation Hot carriers Circuit simulation Stress Impact ionization Voltage Random access memory BiCMOS integrated circuits
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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