NDLI: Deep submicron device with buried insulator between source/drain polysilicon (BIPS)

Content Provider	IEEE Xplore Digital Library
Author	Shimizu, M. Inuishi, M. Ogawa, T. Miyatake, H. Tsukamoto, K. Akasaka, Y.
Copyright Year	1988
Description	Author affiliation: Mitsubishi Electr. Corp., Itami, Japan (Shimizu, M.; Inuishi, M.; Ogawa, T.; Miyatake, H.; Tsukamoto, K.; Akasaka, Y.)
Abstract	A novel isolation technology, called buried insulator between source/drain polysilicon (BIPS), is described. The BIPS isolation structure consists of refilling CVD (chemical vapor deposition) oxides in openings between source/drain polysilicon patterns by double photoresist etchback. A defect- and bird's beak-free process can be realized by this isolation. Devices with BIPS isolation are compared with LOCOS (local oxidation of silicon) with respect to isolation parasitic effects and current drive capability. A 0.5- mu m isolation is achieved, and the narrow channel effects are almost suppressed with BIPS isolation. The subthreshold characteristics of devices with BIPS isolation give the same shape value as those for conventional devices with LOCOS isolation. A ring oscillator with BIPS isolation exhibits a propagation delay time of 69 ps/gate.<>
Starting Page	96
Ending Page	99
File Size	579495
Page Count	4
File Format	PDF
ISSN	01631918
DOI	10.1109/IEDM.1988.32760
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-12-11
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulation Isolation technology Chemical vapor deposition Resists Etching Oxidation Silicon Shape Ring oscillators Propagation delay
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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