NDLI: Importance of top insulator quality for the stability of a-Si thin film transistors

Content Provider	IEEE Xplore Digital Library
Author	Nakamura, T. Yamada, T. Takinami, M. Suzuki, T. Hamano, T. Ozawa, T. Tomiyama, S. MacDonald, D. Weisfield, R. Fennell, L. Tuan, H. Thompson, M.
Copyright Year	1988
Description	Author affiliation: Fuji Xerox, Kanagawa, Japan (Nakamura, T.; Yamada, T.; Takinami, M.; Suzuki, T.; Hamano, T.; Ozawa, T.; Tomiyama, S.)
Abstract	The effect of the top insulator on the stability of a-Si thin-film transistors (TFTs) is shown. TFTs with different top insulators show different Delta Vth (threshold voltage shift), and this Delta Vth is proportional to the flat-band voltage shift of an MIS (metal insulator semiconductor) capacitor fabricated with the same insulator. Furthermore, Delta Vth depends on the size of the gate/drain overlap, drain voltage, and thickness of the top insulator. From these results, is concluded that electrons are injected into the top insulator under the gate/drain overlap by the drain field, causing the threshold voltage shift. The interaction between the top and bottom interfaces is shown by the strong dependence of Vth on top gate voltage. This result supports the assumption that injected electrons terminate part of the gate field due to the use of very thin a-Si and affect TFT characteristics.<>
Starting Page	272
Ending Page	275
File Size	236689
Page Count	4
File Format	PDF
ISSN	01631918
DOI	10.1109/IEDM.1988.32809
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-12-11
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulation Stability Thin film transistors Electrons Capacitors Threshold voltage Laboratories Metastasis Electrodes Silicon
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Electrical Stability of High-Mobility Microcrystalline Silicon Thin-Film Transistors

Intrinsic capacitance of amorphous silicon and polysilicon thin film transistors

Mechanisms of Threshold Voltage Shift in Polymorphous and Microcrystalline Silicon Bottom Gate Thin-Film Transistors

Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs

The physics of amorphous-silicon thin-film transistors

An Analytical Expression for Threshold Voltage of Polycrystalline-Silicon Thin-Film Transistors

Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications

Amorphous silicon thin film transistor with a buried double-gate structure

Ultrathin Si Thin-Film Transistor on Glass

Importance of top insulator quality for the stability of a-Si thin film transistors

Similar Documents

Electrical Stability of High-Mobility Microcrystalline Silicon Thin-Film Transistors

Intrinsic capacitance of amorphous silicon and polysilicon thin film transistors

Mechanisms of Threshold Voltage Shift in Polymorphous and Microcrystalline Silicon Bottom Gate Thin-Film Transistors

Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs

The physics of amorphous-silicon thin-film transistors

An Analytical Expression for Threshold Voltage of Polycrystalline-Silicon Thin-Film Transistors

Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications

Amorphous silicon thin film transistor with a buried double-gate structure

Ultrathin Si Thin-Film Transistor on Glass

Importance of top insulator quality for the stability of a-Si thin film transistors