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Content Provider | IEEE Xplore Digital Library |
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Author | Sasago, M. Endo, M. Tani, Y. Nakagawa, H. Hirai, Y. Nomura, N. |
Copyright Year | 1988 |
Description | Author affiliation: Matsushita Electr. Ind. Co. Ltd., Osaka, Japan (Sasago, M.; Endo, M.; Tani, Y.; Nakagawa, H.; Hirai, Y.; Nomura, N.) |
Abstract | Novel, very simplified, high-aspect-ratio, single-layer resist materials and process technology for KrF excimer laser lithography have been developed. They consist of a negative resist, a positive resist, and a surface treatment process called HARD (high-aspect-ratio resist pattern fabrication by alkaline surface disposal). Both the negative and positive resists are composed of an alkaline-soluble styrene polymer as the highly transparent main polymer. The HARD process differs from the conventional process only in the addition of an alkaline treatment of the resist surface before exposure. High-aspect-ratio resist patterns with a large focus latitude were obtained using this simple method. It is concluded that these techniques are an effective and simple way to fabricate deep-submicron-design-rule VLSIs.< |
Starting Page | 88 |
Ending Page | 91 |
File Size | 514417 |
Page Count | 4 |
File Format | |
ISSN | 01631918 |
DOI | 10.1109/IEDM.1988.32758 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1988-12-11 |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Resists Lithography Polymers Semiconductor lasers Surface treatment Very large scale integration Resins Optical materials Optical device fabrication Photobleaching |
Content Type | Text |
Resource Type | Article |
Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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