NDLI: 2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC

Content Provider	IEEE Xplore Digital Library
Author	Spitz, J. Melloch, M.R. Melnychuk, G. Saddow, S.E.
Copyright Year	2000
Description	Author affiliation: Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA (Spitz, J.)
Abstract	Summary form only given. SiC is attractive for power switching applications due to its high avalanche breakdown field (2-3 MV/cm) and superior chemical and thermal properties. Lateral double-implanted MOSFETs fabricated on an insulating 4H-SiC substrate have demonstrated record-high blocking voltages (Spitz et al., 1998). However, first generation LDMOSFETs used ion implants to form the p-base region, and these devices suffered from very low MOS channel mobility (/spl Lt/1 cm/sup 2//V/spl middot/s) due to the high temperature implant anneal (Das et al., 1999). In this report, we describe a new device structure that combines the high blocking voltage of the insulating substrate with the higher MOS mobility of an epitaxially-grown accumulation channel (Tan et al., 1998). Both the p-well and n-type MOS channel layer are epitaxially grown and selectively etched. No p-type implant is required. The p-well is doped at 5/spl times/10/sup 18/ cm/sup -3/ and is 0.2 /spl mu/m thick, while the n-type channel is doped at 5/spl times/10/sup 15/ cm/sup -3/ and is 0.35 /spl mu/m thick. These profiles and thicknesses are chosen so the n-type channel is completely depleted from the p-base beneath, resulting in a MOSFET threshold voltage of about 6 V at room temperature. The device exhibits a blocking voltage of 2.7 kV, with a specific on-resistance of 3.18 /spl Omega/-cm/sup 2/. At 155/spl deg/C, the threshold voltage and specific on-resistance drop to 3 V and 1.85 /spl Omega//spl middot/cm/sup 2/ respectively. The figure of merit V/sub block//sup 2//R/sub on/ for this device is approximately equal to the theoretical limit for Si power MOSFETs, and the specific on-resistance is the lowest reported to date for any power MOSFET in this voltage range.
Starting Page	127
Ending Page	128
File Size	226527
Page Count	2
File Format	PDF
ISBN	0780364724
DOI	10.1109/DRC.2000.877117
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Implants Insulation Substrates Temperature Threshold voltage Silicon carbide Avalanche breakdown Chemicals Annealing
Content Type	Text
Resource Type	Article

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