NDLI: Lifetime control by low energy electron irradiation and hydrogen annealing [Si power diodes]

Content Provider	IEEE Xplore Digital Library
Author	Jo, J. Park, J. Kim, H.J. Lee, S.H. Shen, Z.Y. Nishihara, Y.
Copyright Year	2000
Description	Author affiliation: Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea (Jo, J.)
Abstract	Lifetime control in silicon power devices is required to reduce turn-off time and energy loss during switching. High energy (2 MeV range) electron and proton irradiations have been used for this purpose. We developed a new method of introducing defects by using low energy (270 keV) electron irradiation and hydrogen annealing. It was generally considered that 270 keV energy electrons are not strong enough to introduce defects. It is thought that the silicon knocked out by a low energy electron stays around the vacancy, and that the silicon can come back to the vacancy very easily. However, if the defect is filled by some other atom, such as hydrogen, the knocked-out silicon can not come back easily, and a higher and more stable defect concentration can be expected. This is why we used hydrogen annealing after low energy electron irradiation. We annealed the irradiated diodes in nitrogen or hydrogen atmosphere. The diodes annealed in hydrogen showed a significant lifetime reduction. This was manifested by increase in forward diode voltage, and decrease in turn-off charge.
Starting Page	61
Ending Page	62
File Size	132808
Page Count	2
File Format	PDF
ISBN	0780364724
DOI	10.1109/DRC.2000.877089
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Hydrogen Silicon Annealing Diodes Energy loss Protons Nitrogen Atmosphere Voltage
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Soft recovery characteristics of punch-through power diodes by proton irradiation

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Application of proton irradiation with energy over 10 MeV for reverse recovery characteristics control of high voltage freewheeling diodes

Improved dynamic properties of GTO-thyristors and diodes by proton implantation

Fast Recovery Diode With Novel Local Lifetime Control

Helium Irradiation for Advanced Lifetime Control in Silicon: New Recombination Centers and Their Interaction Stimulated by Isochronal Annealing

Effect of proton and alpha irradiation on advanced silicon power devices: defect profiles and stability

Helium Implantation for Lifetime Control in Silicon Power Devices

Lithium ion irradiation of standard and oxygenated silicon diodes

Lifetime control by low energy electron irradiation and hydrogen annealing [Si power diodes]

Similar Documents

Soft recovery characteristics of punch-through power diodes by proton irradiation

Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation

Application of proton irradiation with energy over 10 MeV for reverse recovery characteristics control of high voltage freewheeling diodes

Improved dynamic properties of GTO-thyristors and diodes by proton implantation

Fast Recovery Diode With Novel Local Lifetime Control

Helium Irradiation for Advanced Lifetime Control in Silicon: New Recombination Centers and Their Interaction Stimulated by Isochronal Annealing

Effect of proton and alpha irradiation on advanced silicon power devices: defect profiles and stability

Helium Implantation for Lifetime Control in Silicon Power Devices

Lithium ion irradiation of standard and oxygenated silicon diodes

Lifetime control by low energy electron irradiation and hydrogen annealing [Si power diodes]