NDLI: High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Sheppard, S.T. Pribble, W.L. Enerson, D.T. Ring, Z. Smith, R.P. Allen, S.T. Palmour, J.W.
Copyright Year	2000
Description	Author affiliation: Cree Inc., Durham, NC, USA (Sheppard, S.T.)
Abstract	The GaN/AlGaN-on-SiC HEMT is being pursued as an RF power device on which to base next generation X-band and K-band power amplifiers. Previous demonstrations of extremely high power density and total RF power from GaN/AlGaN HEMTs on SI SiC substrates (Sheppard et al., 1999; Wu et al., 1999) adequately demonstrate their potential for improved performance over GaAs-based devices. Considering the recent advances in III-nitride growth and processing techniques, it is not surprising that GaN/AlGaN HEMTs on SiC substrates are beginning to the reach the extremely high power levels that have been predicted for this material system. To continue this trend, we are pursuing high quality HEMT structures with 15% AlGaN molar fraction (MF) in order to fabricate large area devices and demonstrate high power levels. We report the demonstration of over 40 W from a single GaN/AlGaN transistor at 10 GHz under pulsed mode conditions. This high power demonstration includes the first implementation of SiC substrate vias on a GaN-on-SiC microwave transistor for improved gain at X-band.
Starting Page	37
Ending Page	38
File Size	164557
Page Count	2
File Format	PDF
ISBN	0780364724
DOI	10.1109/DRC.2000.877078
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs Gallium nitride Aluminum gallium nitride Silicon carbide Radio frequency Microwave transistors K-band Power amplifiers Radiofrequency amplifiers Microwave devices
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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