NDLI: GaN-based MESFETs and DC-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Gaska, R. Khan, M.A. Hu, X. Simin, G. Yang, J. Deng, J. Rumyantsev, S. Shur, M.S.
Copyright Year	2000
Description	Author affiliation: Sensor Electron. Technol., Latham, NY, USA (Gaska, R.)
Abstract	We present experimental results, which show that GaN MESFET and MOSFET technology can demonstrate the performance comparable to that of GaN-AlGaN HFETs for highly doped narrow channel devices. The device structures were grown by low-pressure MOCVD over [0001] sapphire substrates. PECVD 10-15 nm thick SiO/sub 2/ was used as an insulating layer for doped channel GaN-based MOSFETs. The threshold voltage for MESFETs and DC-MOSFETs ranged from 1.5 V to 10 V, and from 4 V to 20 V, respectively. The maximum drain currents up to 300 mA/mm and transconductances up to 60 mS/mm were measured for 100 /spl mu/m wide devices. The Schottky gate turn-on voltage for MESFET devices was close to 1 V, which is approximately two times lower than for AlGaN-GaN HEMTs. The gate leakage current in DC-MOSFETs was more than three orders of magnitude lower than in MESFETs. The long-channel GaN MESFETs that we fabricated exhibited a cut-off frequency-gate length product of 11.6 GHz-/spl mu/m. This number is comparable with the 16.4 GHz-/spl mu/m value demonstrated recently for AlGaN-GaN MOS-HFETs on SiC substrates and 18.2 GHz-/spl mu/m demonstrated for AlGaN-GaN HFETs on sapphire substrates. The cut-off frequency improves with increasing channel doping. Experimental results and model predictions show that GaN MESFETs and GaN DC-MOSFETs might find applications for power devices in X-band and above.
Starting Page	43
Ending Page	44
File Size	124966
Page Count	2
File Format	PDF
ISBN	0780364724
DOI	10.1109/DRC.2000.877081
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MESFETs Gallium nitride HEMTs MODFETs Aluminum gallium nitride Cutoff frequency MOSFET circuits MOCVD Insulation Threshold voltage
Content Type	Text
Resource Type	Article

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