NDLI: Cryogenic characterization of lateral DMOS transistors for lunar applications

Content Provider	IEEE Xplore Digital Library
Author	Kashyap, A.S. Mudholkar, M. Mantooth, H.A. Vo, T. Mojarradi, M.
Copyright Year	2009
Description	Author affiliation: Dept. of Electrical Engineering, University of Arkansas, Fayetteville, 72701, USA (Kashyap, A.S.; Mudholkar, M.; Mantooth, H.A.) \|\| Jet Propulsion Laboratory, 4800 Oak Grove Drive, Mail Stop 303-300, Pasadena, CA 91109, USA (Vo, T.; Mojarradi, M.)
Abstract	The characterization and device physics study of a lateral DMOS transistor in the cryogenic regime (∼ + 20 °C to − 180 °C) is presented in this paper. Normally, the characteristics of lateral MOSFETs improve with decreasing temperature. However, the asymmetrical nature of LDMOS devices, owing to the presence of a lightly doped drift region, causes the behavior to deviate from the expected characteristics at deep cryo temperatures. The output current is expected to increase with decreasing temperature, but our observations indicate that the current initially increases and then starts decreasing after a certain transition temperature. This is attributed to the carrier freeze-out phenomenon occurring in the drift region due to lower ionization energies available to the carriers. The paper will report results on the transfer and output characteristics of the JPL LDMOS devices as temperature decreases and attempt to explain the observation with physical reasoning.
Starting Page	1
Ending Page	8
File Size	701979
Page Count	8
File Format	PDF
ISBN	9781424426218
ISSN	1095323X
DOI	10.1109/AERO.2009.4839525
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cryogenics Moon MOSFETs Temperature Voltage Circuits Electrons Physics CMOS technology Propulsion
Content Type	Text
Resource Type	Article
Subject	Aerospace Engineering Space and Planetary Science

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