NDLI: Strategies for single patterning of contacts for 32nm and 28nm technology

Content Provider	IEEE Xplore Digital Library
Author	Morgenfeld, B. Stobert, I. Haffner, H. An, J. Kanai, H. Ostermayr, M. Chen, N. Aminpur, M. Brodsky, C. Thomas, A.
Copyright Year	2011
Description	Author affiliation: IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, NY, USA 12533 (Morgenfeld, B.; Stobert, I.; An, J.; Aminpur, M.; Brodsky, C.; Thomas, A.) \|\| Toshiba America Electronic Components, Inc, 2070 Route 52, Hopewell Junction, NY, USA 12533 (Kanai, H.) \|\| Infineon Technologies NA Corp, 2070 Route 52, Hopewell Junction, NY, USA 12533 (Haffner, H.; Ostermayr, M.) \|\| GLOBALFOUNDRIES Inc, 2070 Route 52, Hopewell Junction, NY, USA 12533 (Chen, N.)
Abstract	As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time introduction of new process enablers that allow the support of flexible foundry-oriented ground rules alongside high-performance technology, without inhibiting migration to a single-pass patterning process. The incorporation of device based performance metrics along with rigorous patterning and structural variability studies were critical in the evaluation of material innovation for improved resolution and CD shrink. Additionally novel design changes for single patterning along new capability in data preparation were both assessed to leverage minimal impact of implementation of a single patterning contact process into the existing 32nm and 28nm technology programs [1].
Starting Page	1
Ending Page	8
File Size	1763174
Page Count	8
File Format	PDF
ISBN	9781612844084
ISSN	10788743
e-ISBN	9781612844091
DOI	10.1109/ASMC.2011.5898207
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Contacts Layout Printing Bars Random access memory Resists
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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