NDLI: New methods for improved SRAM detection through scattered light collection

Content Provider	IEEE Xplore Digital Library
Author	Barel, R. Shachar, K. Bechler, Y. Horesh, N. Hsien-Tsung Chiang To-Yu Chen
Copyright Year	2011
Description	Author affiliation: Taiwan Semiconductors Manufacturing Company (TSMC), Hsinchu, Taiwan ROC (Hsien-Tsung Chiang; To-Yu Chen) \|\| Applied Materials Israel, PDC, Rehovot, Israel (Barel, R.; Shachar, K.; Bechler, Y.; Horesh, N.)
Abstract	Accelerated design rule (DR) shrinkage is introducing new challenges to the world of process control, yield monitoring and wafer inspection (WI). One of the main challenges of WI is the detection of small defects below the optical resolution limit of the inspection systems. This paper present a new optical scheme for inspection of advanced SRAM patterns and demonstrates the significant value of the transition from pattern contrast detection to dark background detection by applying tailored light illumination and collection techniques. This work demonstrates the sensitivity improvement of this approach on two advanced 2xnm DR devices. This scheme, compared with current methods, demonstrates enhanced defect signal to noise ratio (SNR), enhanced defect capture rate, and higher throughput.
Starting Page	1
Ending Page	3
File Size	364615
Page Count	3
File Format	PDF
ISBN	9781612844084
ISSN	10788743
e-ISBN	9781612844091
DOI	10.1109/ASMC.2011.5898182
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Signal to noise ratio Inspection Optical filters Silicon germanium Lighting Sensitivity Filtering SRAM Wafer inspection DUV Scattered light Pattern suppression
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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