NDLI: Inline control of an ultra low-k ILD layer using Broadband Spectroscopic Ellipsometry

Content Provider	IEEE Xplore Digital Library
Author	Haupt, R. Jiang Zhiming Haensel, L. Mueller, U.P. Mayer, U.
Copyright Year	2011
Description	Author affiliation: KLA-Tencor Corporation, One Technology Drive, Milpitas 95035, CA (Haupt, R.; Jiang Zhiming; Haensel, L.) \|\| GLOBALFOUNDRIES Module One Limited Liability, Company & Co. KG, Wilschdorfer Landstrasse 101, 01109 Dresden (Mueller, U.P.; Mayer, U.)
Abstract	As chip dimensions are scaling down new challenges develop in the back-end-of-line. In order to keep the capacitance small while decreasing the volume of the inter-layer dielectric (ILD), new materials and processes have been introduced over the past years to lower the dielectric constant of the ILD layers. For design rules of 45nm and below porous Ultra low-k materials are widely used in today's semiconductor process flows. Beside process challenges this introduces stringent requirements for metrology not only to monitor film thickness but other properties of the material as well. This paper discusses the development and implementation of a Broadband Spectroscopic Ellipsometer for inline process control of a SiCOH based porous ultra low-k film. After deposition the material is cured with UV light to introduce the porosity. The challenge for the metrology is to measure both the thickness and an adequate metric for the chemical properties which do no longer correlate with optical properties. In addition the chemical properties vary as a gradient from top to bottom of the film. We discuss the methodology to develop a metrology recipe resulting in the thickness of a metric layer and the percentaged thickness shrink being the best parameters to sense and track the process adequately. Results demonstrate the sensitivity of the technique to process variations. Short term precision, long term stability and tool-to-tool matching results prove that the technique enables routine process monitoring in a high volume automated semiconductor fab.
Starting Page	1
Ending Page	6
File Size	527949
Page Count	6
File Format	PDF
ISBN	9781612844084
ISSN	10788743
e-ISBN	9781612844091
DOI	10.1109/ASMC.2011.5898172
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Correlation Refractive index Thickness measurement Metrology Curing UV cure Inter-layer dielectric ILD ultra low-k ULK Spectroscopic Ellipsometry
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

Composition measurement of tri-layer SiGe stack using broadband spectroscopic ellipsometry

Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures

Stress Engineering in CuILow-k Interconnects by using UV-Cure of Cu Diffusion Barrier Dielectrics

Spectroscopic ellipsometry and reflectometry: a user's perspective

Evaluation of Pre-Amorphized Layer Thickness and Interface Quality of High-Dose Shallow Implanted Silicon by Spectroscopic Ellipsometry

Inline composition and thickness control of SiON, HfSiON gate films using VUV capable spectroscopic ellipsometer

In-line inspection on thickness of sputtered HfO/sub 2/ and Hf metal ultra-thin films by spectroscopic ellipsometry

Non-destructive characterisation of porosity and pore size distribution in porous low-k dielectric films

Inline control of an ultra low-k ILD layer using Broadband Spectroscopic Ellipsometry

Similar Documents

Determining thickness and refractive index from free-standing ultra-thin polymer films with spectroscopic ellipsometry

Composition measurement of tri-layer SiGe stack using broadband spectroscopic ellipsometry

Inline-Characterization and Step Coverage Optimization of Deposited Dielectrics in DRAM Structures

Stress Engineering in CuILow-k Interconnects by using UV-Cure of Cu Diffusion Barrier Dielectrics

Spectroscopic ellipsometry and reflectometry: a user's perspective

Evaluation of Pre-Amorphized Layer Thickness and Interface Quality of High-Dose Shallow Implanted Silicon by Spectroscopic Ellipsometry

Inline composition and thickness control of SiON, HfSiON gate films using VUV capable spectroscopic ellipsometer

In-line inspection on thickness of sputtered HfO/sub 2/ and Hf metal ultra-thin films by spectroscopic ellipsometry

Non-destructive characterisation of porosity and pore size distribution in porous low-k dielectric films

Inline control of an ultra low-k ILD layer using Broadband Spectroscopic Ellipsometry