NDLI: Optimization of resist strip recipe for aluminum metal etch processes

Content Provider	IEEE Xplore Digital Library
Author	Mammo, E.G. Singh, N. Mananquil, C. Myers, D.R.
Copyright Year	2002
Description	Author affiliation: Agere Syst., Allentown, PA, USA (Mammo, E.G.)
Abstract	This paper discusses experimental results used to develop an optimized resist strip process for an Advanced Strip and Passivation (ASP+) chamber on Applied Materials Decoupled Plasma Source (DPS) 5200 metal etch platform. The scope of the experiment is to develop a resist strip process on a new ASIC BiCMOS product. To meet tight capacity schedule, the resist removal process must be relatively short. This experiment does not look for the shortest strip time, but considered various gas flow, passivation, and strip sequences to keep the resist strip time well below the total metal etch time. A design of experiment (DOE) was run to measure the response of key recipe parameters. The parameters evaluated were strip time, passivation time, passivation and strip sequence, CF/sub 4/ flow, and temperature. The response was the amount of residual resist remaining after the strip process is completed. The result showed that temperature was the major factor in effective resist removal followed by CF/sub 4/ flow and passivation/strip sequence. A second DOE was run to verify the results and lower margin. Based on the results of the DOE, a robust strip recipe was designed and implemented in manufacturing for all metal etch processes. The new process is shorter than the metal etch process, and does not affect the throughput of the system. Also, no residual resist is found since the new recipe and post-strip inspection procedure was implemented.
Sponsorship	IEEE Electron Devices Soc. Components, Packagin & Manuf. Technol. Soc. MICRO
Starting Page	376
Ending Page	380
File Size	410215
Page Count	5
File Format	PDF
ISBN	0780371585
DOI	10.1109/ASMC.2002.1001637
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-04-30
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resists Strips Aluminum Etching Passivation US Department of Energy Plasma temperature Inorganic materials Plasma sources Application specific integrated circuits
Content Type	Text
Resource Type	Article

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