NDLI: Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

Content Provider	IEEE Xplore Digital Library
Author	Kamath, K. Jiang, H. Klotzkin, D. Phillips, J. Sosnowski, T. Norris, T. Singh, J. Bhattacharya, P.
Copyright Year	1998
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA (Kamath, K.)
Abstract	The strain tensor in pyramidal Ga(In)As/GaAs self-assembled quantum dots is characterized in detail using a valence force field model and is applied to an eight-band k/spl middot/p formalism to find the electronic spectra in the highly strained dots. Results obtained for the conduction band spectra using the effective mass approach are shown to have serious errors. The energy difference between the ground and excited states obtained from both eight-band calculations and experimental results indicates phonon bottleneck in these dots which is confirmed by a relatively simple high frequency electrical impedance measurements on quantum dot lasers. The electron capture times of 30-40 ps are obtained compared to 2-5ps in SCH quantum well lasers and 1 ps in tunneling injection lasers, and the modulation band width is found to be limited by the capture times. The time resolved photoluminescence measurements gave decay time constants of /spl sim/700 ps and /spl sim/200-250 ps for the ground and excited state transitions, respectively.
Starting Page	525
Ending Page	529
File Size	370609
Page Count	5
File Format	PDF
ISBN	0750305568
DOI	10.1109/ISCS.1998.711731
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitive sensors Tensile stress Quantum dot lasers Quantum well lasers Laser excitation Laser transitions Gallium arsenide Quantum dots Effective mass Phonons
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers

Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

Strained InGaAs/GaAs quantum wires: modeling and optical properties

Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots

Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures

Gain spectra measurements in n-type modulation doped GaAs/AlGaAs quantum well lasers

Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layer

InAs self-assembled quantum dot and quantum dash lasers on InP for 1.55μm optical telecommunications

Strain-compensation of inas quantum dots: dot size dependence

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

Similar Documents

The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers

Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

Strained InGaAs/GaAs quantum wires: modeling and optical properties

Study of gain characteristics of GaAs/GaAlAs self assembled quantum dots

Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures

Gain spectra measurements in n-type modulation doped GaAs/AlGaAs quantum well lasers

Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layer

InAs self-assembled quantum dot and quantum dash lasers on InP for 1.55μm optical telecommunications

Strain-compensation of inas quantum dots: dot size dependence

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots