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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lee, P.P. Hwu, R.J. Sadwick, L.P. Balasubramaniam, H. Kumar, B.R. Lai, T.C. Chu, S.N.G. Alvis, R. Lareau, R.T. Wood, M.C. |
| Copyright Year | 1998 |
| Description | Author affiliation: Dept. of Mater. Sci. & Eng., Utah Univ., Salt Lake City, UT, USA (Lee, P.P.) |
| Abstract | Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs are reported. Both DyP and DyAs have been grown by solid source MBE with growth temperatures ranging from 500 to 600/spl deg/C and growth rates between 0.5 and 0.7 /spl mu/m/hr. DyP epilayers are n-type with measured electron concentrations on the order of 3 to 4/spl times/10/sup 20/ cm/sup -3/, room temperature mobilities of 250 to 300 cm/sup 2//Vs, and a barrier height of about 0.81 eV to GaAs at room temperature. DyAs epilayers are also n-type with concentrations of 1 to 2/spl times/10/sup 21/ cm/sup -3/, and mobilities between 25 and 40 cm/sup 2//Vs. DyP is stable in air with no signs of oxidation even after months of exposure. |
| Starting Page | 159 |
| Ending Page | 162 |
| File Size | 267724 |
| Page Count | 4 |
| File Format | |
| ISBN | 0750305568 |
| DOI | 10.1109/ISCS.1998.711604 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-09-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Molecular beam epitaxial growth Lattices Diffraction Substrates Rough surfaces Surface roughness Surface contamination Materials science and technology Cities and towns |
| Content Type | Text |
| Resource Type | Article |
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