NDLI: Patterned high-index substrates as templates for novel quantum-wire and dot arrays: growth and potential applications

Content Provider	IEEE Xplore Digital Library
Author	Notzel, R. Ramsteiner, M. Zhichuan Niu Daweritz, L. Ploog, K.H.
Copyright Year	1998
Description	Author affiliation: Paul-Drude-Inst. fur Festkoperelektronik, Berlin, Germany (Notzel, R.)
Abstract	On patterned GaAs (311)A substrates lateral GaAs/(AlGa)As quantum wires are formed by MBE at the fast growing sidewall of mesa stripes along [01-1]. This new growth mode develops a smooth, convex surface profile without faceting. The wires exhibit narrow PL linewidths, high PL efficiency and strong confinement up to room temperature, For a given mesa height the wires can be vertically stacked in three-dimensional arrays. Strained (InGa)As quantum wires reveal strongly enhanced optical nonlinearity due to internal piezoelectric fields. In different structures (InGa)As islands can be positioned selectively on the patterned substrate. Finally, in atomic hydrogen assisted MBE step bunching across the GaAs wires forms arrays of quantum dots whose /spl mu/-PL spectra are dominated by one single sharp line.
Starting Page	65
Ending Page	70
File Size	428030
Page Count	6
File Format	PDF
ISBN	0750305568
DOI	10.1109/ISCS.1998.711550
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-09-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	US Department of Transportation Gallium arsenide Substrates Wires Quantum dots Surface morphology Nanostructures Rough surfaces Surface roughness Temperature
Content Type	Text
Resource Type	Article

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