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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Turi, M.A. Delgado-Frias, J.G. |
| Copyright Year | 2011 |
| Description | Author affiliation: School of Electrical Engineering and Computer Science, Washington State University, Pullman, 99164-2752, USA (Turi, M.A.; Delgado-Frias, J.G.) |
| Abstract | We present eight eight-transistor (8T) FinFET SRAM cells which differ in back-gate connections and swing of the Read-line input. These schemes are evaluated in terms of leakage current, delay, read and write energy dissipation, and static noise margin (SNM) for 16 bits by 16 words (16×16) and 32 bits by 1024 words (32×1024) SRAM arrays. Performance is compared between the 8T schemes and two well-performing six-transistor (6T) SRAM cells. Overall, the 8T-SRAM schemes perform better than the 6T schemes primarily because leakage current is reduced by low-power schemes that reverse-bias the back-gates of the cross-coupled inverters without an adverse impact on the read speed. This is especially true for larger SRAM arrays, e.g. 32×1024. For a 32×1024 SRAM array, the best performing 8T scheme, Low-Power Inverters (LP_INV), has an energy-delay product that is 87.3% less than the best-performing 6T scheme, Low-Power (minimum-sized) (LP6). |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 524718 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612848563 |
| ISSN | 15483746 |
| e-ISBN | 9781612848570 |
| e-ISBN | 9781612848556 |
| DOI | 10.1109/MWSCAS.2011.6026404 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-08-07 |
| Publisher Place | Korea (South) |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Random access memory Transistors CMOS technology Technological innovation CMOS integrated circuits Educational institutions |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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