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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Haghi, M. Draper, J. |
| Copyright Year | 2011 |
| Description | Author affiliation: Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, USA (Haghi, M.) || Information Sciences Institute, University of Southern California, Marina Del Rey, USA (Draper, J.) |
| Abstract | In this paper, we investigate and compare the effectiveness of different charge sharing techniques for reduction of charge sharing and collection among adjacent nodes in 65-nm technology NFET transistors. We use Synopsys 2-D TCAD mixed-mode simulations to measure collected charge at a node adjacent to a device struck by a heavy-ion particle for cases of using Shallow Trench Isolation (STI), Deep Trench Isolation (DTI), guard-ring and guard-diode; different nodal separations; and with particles of differing linear energy transfer (LET) strengths. The results show the most reduction in collected charge (more than 98%) at the adjacent node for DTI. Also, there is almost zero increase in area while using DTI; however, some pulse broadening at the struck node is observed. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1105410 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612848563 |
| ISSN | 15483746 |
| e-ISBN | 9781612848570 |
| e-ISBN | 9781612848556 |
| DOI | 10.1109/MWSCAS.2011.6026598 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-08-07 |
| Publisher Place | Korea (South) |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Diffusion tensor imaging |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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