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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Leblebici, Y. Unlu, M.S. Morkoc, H. Kang, S.M. |
| Copyright Year | 1992 |
| Description | Author affiliation: Illinois Univ., Urbana, IL, USA (Leblebici, Y.; Unlu, M.S.; Morkoc, H.; Kang, S.M.) |
| Abstract | A novel approach is presented for incorporating the transient solution of one-dimensional semiconductor drift-diffusion equations within a general circuit simulation tool. This approach allows simple representation of localized carrier transport models of simulated devices through equivalent circuit elements such as voltage-controlled current sources and capacitors. As the device-level simulation is carried out by the circuit simulator using an equivalent circuit representation, this approach also lends itself to mixed-mode simulation of devices and circuits. It has been shown that one-dimensional device structures can be simulated with an acceptable computational cost. The device simulation model described here has been implemented in the general-purpose direct method circuit simulation program iSMILE. The applications of the proposed device simulation approach are demonstrated by simulation examples, including the drift and diffusion of excess carriers generated by a localized light pulse in a GaAs p-i-n diode structure.< |
| Starting Page | 895 |
| Ending Page | 898 |
| File Size | 286897 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780305930 |
| DOI | 10.1109/ISCAS.1992.230077 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1992-05-10 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Circuit simulation Computational modeling Equivalent circuits Equations Voltage Capacitors Computational efficiency Pulse generation Gallium arsenide P-i-n diodes |
| Content Type | Text |
| Resource Type | Article |
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