NDLI: Physical modelling of microwave field effect transistors: a review

Content Provider	IEEE Xplore Digital Library
Author	Zimmermann, J. Salmer, G. Fauquenbergue, R. Cappy, A.
Copyright Year	1988
Description	Author affiliation: Centre Hyperfrequences et Semicond., Lille Univ., Villeneuve d'Ascq, France (Zimmermann, J.; Salmer, G.; Fauquenbergue, R.; Cappy, A.)
Abstract	The accurate modelling of GaAs FETs and related heterojunction structures requires that a number of physical phenomena and technological parameters be considered. Among these, electron dynamics in a two-dimensional gas, the influence of deep traps in substrates and AlGaAs layers, the source parasitic access impedance, surface potential effect, and velocity overshoot in submicrometer devices are of interest. A series of simulation models exist which can take a number of these effects into consideration in a more or less accurate way: the Monte Carlo or particle models, the two-dimensional solving methods for semiconductor equations, and the simpler one-dimensional or analytical models. These are reviewed and their main ranges of applicability are compared and discussed.<>
Starting Page	2049
Ending Page	2055
File Size	487718
Page Count	7
File Format	PDF
DOI	10.1109/ISCAS.1988.15344
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-06-07
Publisher Place	Finland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microwave FETs HEMTs Predictive models Integrated circuit technology Electron traps Analytical models Gallium arsenide MODFET integrated circuits Frequency Doping
Content Type	Text
Resource Type	Article

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