NDLI: Modeling and simulation of doped channel heterostructure FETs and integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Shur, M. Baek, J.H. Ruden, P.P. Daniels, R.R. Grider, D.E. Nohava, T. Arch, D.
Copyright Year	1988
Description	Author affiliation: Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA (Shur, M.; Baek, J.H.)
Abstract	Describes a model used for the design of doped channel pseudomorphic AlGaAs/InGaAs/GaAs quantum-well HIGFETs and for the simulation of digital integrated circuits based on these devices. The model is based on the self-consistent quantum mechanical calculation of subbands and electron density in InGaAs quantum wells, obtained by solving a one-dimensional effective mass Schrodinger equation. Such a calculation shows that the potential barrier between the quasi-Fermi level in the channel and the bottom of the conduction band in the barrier layer is considerably larger for the doped-channel structure. This lowers the thermionic emission gate current of the doped channel device compared to the undoped channel structure, as confirmed by experimental data. The authors measured peak transconductance g/sub m/=471 mS/mm and peak l/sub dsat/=660 mA/mm in 0.6- mu m-gate doped-channel services. These results demonstrate the advantages of the DCHFET over the standard MODFET structure and their potential for high speed IC applications.<>
Starting Page	409
Ending Page	412
File Size	302895
Page Count	4
File Format	PDF
DOI	10.1109/ISCAS.1988.14951
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-06-07
Publisher Place	Finland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	HEMTs MODFETs Integrated circuit modeling Indium gallium arsenide Quantum mechanics Circuit simulation Gallium arsenide Quantum well devices Digital integrated circuits Electrons
Content Type	Text
Resource Type	Article

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