NDLI: Memristance and memcapacitance modeling of thin film devices showing memristive behavior

Content Provider	IEEE Xplore Digital Library
Author	Ahmed, M.G. Kyoungrok Cho Tae-Won Cho
Copyright Year	2012
Description	Author affiliation: College of Electrical and Computer Engineering, Chungbuk National University, Gasein-dong, Heungdeok-gu, Cheongju City, Chungcheonbuk, 361-763 South Korea (Ahmed, M.G.; Kyoungrok Cho; Tae-Won Cho)
Abstract	In 2008, the fourth passive element “Memristor” was implemented as a device having both passivity and nonvolatile properties opening the way into new possibilities in the design and fabrication of innovative memory, arithmetic and logic architectures. Nano-features and ionic transport mechanism inherent in memristor device introduce new challenges into modeling, characterization and, in particular, in the related circuit simulation needs with system constructs. Therefore, in this paper, we analyze memristor device fundamentally to characterize the memristance paying particular attention to the hidden memcapacitance effect. Our proposed macro-model modifies takes into account some of the non ideal effects like tunneling current and the hidden memcapacitor constructed across non conducting materials. The model provides the insight for building a device as either memristive or memcapacitive system. The simulation results have been compared with HP published data which show good agreement.
Starting Page	1
Ending Page	5
File Size	1277038
Page Count	5
File Format	PDF
ISBN	9781467302876
ISSN	21650179
e-ISBN	9781467302890
DOI	10.1109/CNNA.2012.6331436
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-08-29
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Memristors Integrated circuit modeling Mathematical model Junctions Metals Capacitance Materials
Content Type	Text
Resource Type	Article

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