NDLI: Low frequency noise in chemical vapor deposited MoS2

Content Provider	IEEE Xplore Digital Library
Author	Yuji Wang Xinhang Luo Ningjiao Zhang Laskar, M.R. Lu Ma Yiying Wu Rajan, S. Wu Lu
Copyright Year	2013
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA (Yuji Wang; Xinhang Luo; Ningjiao Zhang; Laskar, M.R.; Rajan, S.; Wu Lu) \|\| Dept. of Chem. & Biochem., Ohio State Univ., Columbus, OH, USA (Lu Ma; Yiying Wu)
Abstract	Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal $MoS_{2}$ grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge's parameter ranging between $1.44×10^{-3}$ and $3.51×10^{-2}.$ Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown $MoS_{2}$ devices than reported single-layer $MoS_{2}$ FET. The extracted Hooge's parameter is one order of magnitude lower than CVD-grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility.
Starting Page	1
Ending Page	3
File Size	789081
Page Count	3
File Format	PDF
ISBN	9781479929351
DOI	10.1109/ARFTG-2.2013.6737358
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-11-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise Semiconductor device measurement Materials Graphene Frequency measurement Noise measurement mobility MoS2 CVD low frequency noise
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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