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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Dexin Wang Nordman, C. Daughton, J.M. Zhenghong Qian Fink, J. |
| Copyright Year | 1965 |
| Abstract | Spin dependent tunneling (SDT) wafers were deposited using dc magnetron sputtering. SDT junctions were patterned and connected with one layer of metal lines using photolithography techniques. These junctions have a typical stack structure of Si(100)-Si/sub 3/N/sub 4/-Ru-CoFeB-Al/sub 2/O/sub 3/-CoFeB-Ru-FeCo-CrMnPt with the antiferromagnet CrMnPt layers for pinning at the top. High-resolution transmission electron microscopy (HRTEM) reveals that the CoFeB has an amorphous structure and a smooth interface with the Al/sub 2/O/sub 3/ tunnel barrier. Although it is difficult to pin the amorphous CoFeB directly from the top, the use of a synthetic antiferromagnet (SAF) pinned layer structure allows sufficient rigidity of the reference CoFeB layer. The tunnel junctions were annealed at 250/spl deg/C for 1 h and tested for magneto-transport properties with tunnel magnetoresistive (TMR) values as high as 70.4% at room temperature, which is the highest value ever reported for such a sandwich structure. This TMR value translates to a spin polarization of 51% for CoFeB, which is likely to be higher at lower temperatures. These junctions also have a low coercivity (Hc) and a low parallel coupling field (Hcoupl). The combination of a high TMR, a low Hc, and a low Hcoupl is ideal for magnetic field sensor applications. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 2269 |
| Ending Page | 2271 |
| Page Count | 3 |
| File Size | 199613 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 40 |
| Issue Number | 4 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-07-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Temperature Tunneling magnetoresistance Amorphous magnetic materials Antiferromagnetic materials Amorphous materials Magnetic sensors Sputtering Lithography Transmission electron microscopy Annealing |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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