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Content Provider | IEEE Xplore Digital Library |
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Author | Huang, Y.H. Hsu, J.H. Chen, J.W. |
Copyright Year | 1965 |
Abstract | The magneto-transport properties of the granular Fe/sub 0.5/(Al/sub 2/O/sub 3/)/sub 0.5/ solids with various film thickness have been investigated. The temperature dependence of the resistivity shows that all samples follow a tunneling type equation /spl rho/(T)=/spl rho//sub 0/exp(T/sub 0//T)/sup 1//spl alpha// with /spl rho//spl ap/0.1/spl sim/1 /spl Omega/cm at 300 K and /spl alpha/=2. The results of magneto-resistance at 300 K indicate that the value is about 4.5% for thick films. It increases slowly with decreasing film thickness. At about 150 nm, a peak value of TMR is found, which is determined to be 5%. Then TMR drops sharply with further reducing film thickness. It becomes only 3% at t=20 nm. At low temperatures, the TMR effect becomes larger and shows similar thickness dependence. However, the values of T/sub 0/ that relate to the geometry of the tunneling barrier show behavior of opposite thickness dependence. A small T/sub 0/ is associated with a large TMR effect. In this report, the correlation of the film microstructure and the TMR effect are discussed in details. |
Sponsorship | IEEE Magnetics Society |
Starting Page | 3556 |
Ending Page | 3558 |
Page Count | 3 |
File Size | 297713 |
File Format | |
ISSN | 00189464 |
Volume Number | 33 |
Issue Number | 5 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1997-09-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Tunneling Temperature dependence Magnetic properties Iron Solids Conductivity Equations Thick films Geometry Microstructure |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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