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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Byung-Il Cho Win, W. Manthiram, A. Walser, R.M. |
| Copyright Year | 1965 |
| Abstract | Previous research has shown that different magnetic (antiferromagnetic AFM and ferromagnetic FM) clusters can coexist in amorphous Fe/sub x/Zr/sub 100-x/ alloys with compositions in the range 88/spl les/x/spl les/93. This research shows that in compositionally modulated (CM) amorphous thin films, this range can be extended to x=66. Three coexisting states (one AFM and two different FM states) are observed in CM films in the range 66/spl les/x/spl les/85. With increasing Fe, the Curie temperature T/sub c1/ of the ferromagnetic matrix phase FM/sub 1/ increased from 134 K to 273 K. The existence of FM/sub 2/ was evident in the residual magnetization observed for T/spl Gt/T/sub c1/, and in the 300/spl deg/K hysteresis loops. The AFM spin clusters were evidenced in the exchange shifted hysteresis loops at 50 K. The extended compositional range for stable heterogeneity with the CM film deposition is due to the removal of restrictions imposed on atomic supply in alloy deposition.< |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 4443 |
| Ending Page | 4445 |
| Page Count | 3 |
| File Size | 328914 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 30 |
| Issue Number | 6 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-11-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Antiferromagnetic materials Amorphous materials Magnetic hysteresis Amorphous magnetic materials Zirconium Iron alloys Transistors Temperature Magnetization Atomic layer deposition |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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