NDLI: The Dependence of Offset Voltage in p-Type 3C-SiC van der Pauw Device on Applied Strain

Content Provider	IEEE Xplore Digital Library
Author	Qamar, A. Hoang-Phuong Phan Dzung Viet Dao Tanner, P. Toan Dinh Li Wang Dimitrijev, S.
Copyright Year	1980
Abstract	This letter reports for the first time the strain dependence of the offset voltage in p-type 3C-SiC van der Pauw square device. The p-type 3C-SiC thin film was epitaxially grown on a p-type Si(100) wafer using low pressure chemical vapor deposition followed by a conventional photolithography and dry etch processes, forming four-terminal van der Pauw device. The influence of applied tensile and compressive strain on the offset voltage of the van der Pauw device was investigated using the bending beam method. Experimental results showed that the offset voltage of the device is significantly changed by applied compressive and tensile strain, indicating the feasibility of using this effect for mechanical sensing applications. The sensitivity of the device to the applied strain has been found to be 70 (mV/A)/ppm.
Sponsorship	IEEE Electron Devices Society
Starting Page	708
Ending Page	710
Page Count	3
File Size	720716
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Strain Silicon carbide Silicon Substrates Piezoresistance Resistors Sensors strain sensor P-type 3C-SiC van der Pauw device
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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