NDLI: Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Content Provider	IEEE Xplore Digital Library
Author	Kashio, N. Hoshi, T. Kurishima, K. Ida, M. Matsuzaki, H.
Copyright Year	1980
Abstract	This letter presents InP/GaAsSb/InGaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a highly doped base contact layer. In order to reduce the base contact resistivity, a 3-nm-thick highly doped GaAsSb contact layer is inserted between the InP emitter and 17-nm-thick composition- and doping-graded InGaAsSb base. Fabricated DHBTs with a 0.25-μm emitter show a current gain of 32 and a high open-base breakdown voltage BVCEO of 5.2 V. The DHBTs also exhibit fT/f_max = 513/637 GHz at a collector current density of 9.5 mA/μm² and VCE = 1 V. The f_max is higher by 124 GHz than that for InP/InGaAsSb DHBTs without the GaAsSb contact layer. These results indicate that the use of the GaAsSb/InGaAsSb base structure is very effective in improving f_max.
Sponsorship	IEEE Electron Devices Society
Starting Page	657
Ending Page	659
Page Count	3
File Size	779655
File Format	PDF
ISSN	07413106
Volume Number	36
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Double heterojunction bipolar transistors Indium phosphide Resistance Indium gallium arsenide Doping Conductivity Electrical resistance measurement highly doped base contact GaAsSb double heterojunction bipolar transistors (DHBTs) InP/InGaAsSb
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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