NDLI: Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology

Content Provider	IEEE Xplore Digital Library
Author	Yi-Wei Lian Yu-Syuan Lin Hou-Cheng Lu Yen-Chieh Huang Hsu, S.S.H.
Copyright Year	1963
Abstract	The proposed hybrid Schottky-ohmic drain structure is analyzed in detail for AlGaN/GaN power high-electron mobility transistors on the Si substrate. Without any additional photomasks and process steps, the hybrid drain design can alter the electric field distribution to improve the breakdown voltage V_BK. In addition, it provides an additional current path to achieve zero onset voltage and reduce the ON-resistance. It was found that the Schottky extension L_ext is critical to V_BK, R_ON, and also the current collapse phenomena of the transistors. The extended Schottky electrodes for optimized transistor characteristics are investigated, and the physics behind are discussed. With an L_ext ~ 2-3 μm, V_BK can be improved up to 60% with an R_ON degradation below 3%.
Sponsorship	IEEE Electron Devices Society
Starting Page	519
Ending Page	524
Page Count	6
File Size	1466498
File Format	PDF
ISSN	00189383
Volume Number	62
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride HEMTs MODFETs Aluminum gallium nitride Logic gates Electrodes Schottky contact. Breakdown voltage GaN-on-Si high-electron mobility transistor (HEMT) leakage current Schottky contact
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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